The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. ...
Spintronics utilizes the electronic spin for information processing and microelectronics. Currently, spintronic devices are mostly based on ferromagnetic device architectures. In view of long-term perspectives ...
The usual magnetic materials in spintronics, as Fe or Co, possess a small Spin-Orbit-Coupling (SOC). To circumvent this short-coming, the common practice has been to ...
The term tunnel electroresistance (TER) denotes a fast, non-volatile, reversible resistance switching triggered by voltage pulses in ferroelectric tunnel junctions. It is explained by subtle ...
Ferroelectric materials are made of domains in which electric dipoles are all aligned in the same direction. The manipulation of these domains by an electric ...
In this article, we demonstrated large topological Hall effect in lightly doped (Ca,Ce)MnO3 thin films. Magnetic force microscopy experiments revealed the presence of magnetic bubbles ...
Physicists have succeeded in fabricating a network of four coupled nano-oscillators capable of recognizing spoken vowels by tuning their frequencies according to an automatic rule ...
In neuroscience, population coding theory demonstrates that neural assemblies can achieve fault-tolerant information processing. Mapped to nanoelectronics, this strategy could allow for reliable computing with ...
Magnetic properties of ultrathin multilayers having a perpendicular magnetic anisotropy (PMA) have been extensively investigated in the 90’s.
Laboratoire Albert Fert (UMR137)
CNRS, Thales, Université Paris-Saclay
1 Avenue Augustin Fresnel
91120 Palaiseau, France
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