In this article, we demonstrated large topological Hall effect in lightly doped (Ca,Ce)MnO3 thin films. Magnetic force microscopy experiments revealed the presence of magnetic bubbles whose density evolution with field coincides with that of the topological Hall effect. In addition, the topological Hall effect amplitude varies significantly with the carrier concentration in (Ca,Ce)MnO3 and diverges near the metal-insulator transition. We discuss the amplification of the topological Hall effect with the reduction of doping by electronic correlation effects.

Reference:
“Giant topological Hall effect in correlated oxide thin films”
Vistoli L., Wang W., Sander A., Zhu Q., Casals B., Cichelero R., Barthélémy A., Fusil S., Herranz G., Valencia S., Abrudan R., Weschke E., Nakazawa K., Kohno H., Santamaria J., Wu W., Garcia V. and Bibes M.
Nature Physics DOI : 10.1038/s41567-018-0307-5

Collaborations:
Département de Physique et Astronomie, Université Rutgers, USA
Institut de Ciència de Materials de Barcelona, Spain
Helmholtz-Zentrum Berlin für Materialen & Energie, Germany
Department of Earth and Space Science, Graduate School of Science, Osaka University, Japan
Department of Physics, Nagoya University, Japan
Physics of Complex Materials Group (GFMC), Universidad Complutense de Madrid, Spain

Transverse resistivity of a thin film of Ca0.96Ce0.04MnO3 at different temperatures showing three components: (i) the normal Hall effect (at 130 K for ex.), (ii) the anomalous Hall effect ((<100 K) related to the perpendicular anisotropy of the film, and (iii) the topological Hall effect (<80 K) related to the bubbles observed by magnetic force magnetometry.